Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

論文の詳細を見る
We have analyzed the quantum energy levels of multi-stacked In-rich InGaN/GaN quantum well (QW) system from the electrical and optical properties obtained by performing C-V, DLTS, and PL measurements. The carrier accumulation peaks, one of the evidence of the QW existence, appeared in carrier profile calculated from the C-V data. In the DLTS measurement, two kinds of signals originated from a confined energy level of QW and an antisite point defect were analyzed, and then their activation energies were obtained about 0.37 and 0.63 eV from the conduction band edge, respectively. From the PL measurements it showed that the band gap of GaN and the energy for band to band transition of InGaN QW are 3.40 eV and 3.10 eV, respectively. In result, the band structure of the InGaN/GaN QW system could be suggested.
社団法人電子情報通信学会の論文
2007-06-18