Growth and Characterization of High Quality $a$-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique

概要

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Nonpolar ($11\bar{2}0$) $a$-plane InGaN/GaN single quantum well (SQW) structure has been grown using a multi buffer layer on a ($1\bar{1}02$) $r$-plane sapphire substrate. The effects on the lattice constants of the $a$-plane GaN template caused by reactor pressure and V/III ratio of the first buffer layer were studied to improve the crystal quality. Under optimum growth conditions, the full widths at half maximum (FWHMs) of ($11\bar{2}0$) X-ray rocking curves along the $c$- and $m$-axis orientations were 430 and 530 arcsec, respectively. The optical characteristics of the nonpolar InGaN SQW determined from excitation-power-dependent photoluminescence and temperature-dependent photoluminescence spectra showed the absence of the quantum-confined Stark effect.
2010-04-25