Study on Defect States in GaN Epilayer Induced by Irradiation of High-Energy Electrons
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概要
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The defect states of an electron-beam irradiated GaN epilayer were characterized by capacitance–voltage ($C$–$V$) and deep-level transient spectroscopy (DLTS) measurements. The electron irradiation was performed using 1 and 2 MeV energy beams with $1 \times 10^{15}$ and $1 \times 10^{16}$ cm-2 doses, respectively. The depth penetrated in the GaN epilayer by 1 MeV electrons appeared to be about 450 to 600 nm from the $C$–$V$ measurement. Five defect states with activation energies of 0.34, 0.49, and 0.65 eV including two broad signals were observed by DLTS measurements, and it was suggested that they might originate from crystal damage during high-energy electron irradiation.
- 2008-08-25
著者
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Lee Dong
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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LEE Byung
Laboratory of Molecular Biology and Microbial Chemistry, Tokyo University of Agriculture and Technol
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Kim Jin
Quantun-function Spinics Lab. And Dept. Of Physics Hanyang University
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Oh Dae
IT Convergence & Components Laboratory, Electronics and Telecommunications Research Institute, Daejeon 350-700, Korea
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Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Ha Limkyung
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Lee Kyu-Seok
IT Convergence & Components Laboratory, Electronics and Telecommunications Research Institute, Daejeon 350-700, Korea
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Bae Sung-Bum
IT Convergence & Components Laboratory, Electronics and Telecommunications Research Institute, Daejeon 350-700, Korea
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Lee Byung
Laboratory for Quantum Optics, KAERI, Daejeon 705-353, Republic of Korea
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Bae Sung-Bum
IT Convergence & Components Laboratory, Electronics and Telecommunications Research Institute, Daejeon 350-700, Korea
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Lee Dong
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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