Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
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概要
- 論文の詳細を見る
The energy band structure and defect state of an InAs/InGaAs/GaAs quantum dot-infrared photodetector (QDIP) were characterized by performing capacitance–voltage and deep level transient spectroscopy measurements. We found a confined energy level of the InAs/InGaAs quantum dot in the InGaAs/GaAs quantum well. The confined energy in this QDIP structure was measured to be approximately 340 meV below the barrier edge which is located at the conduction band edge of the GaAs layer. This QDIP structure has also a point defect with an activation energy of 0.60 eV, which may be considered as an EL2 family in a GaAs material.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
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Kim Eun
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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CHOI Won
Nano-Device Research Center, Korea Institute of Science and Technology
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SONG Jin
Nano-Device Research Center, Korea Institute of Science and Technology
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LEE Jung
Nano-Device Research Center, Korea Institute of Science and Technology
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Kim Jin
Quantun-function Spinics Lab. And Dept. Of Physics Hanyang University
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Lee Jung
Nano-Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Choi Won
Nano-Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Song Jin
Nano-Device Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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