High-Response i-InAs/n-GaAs Quantum-Dot Infrared Photodetector with No Current Blocking Barrier
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概要
- 論文の詳細を見る
We report a high-response normal-incidence infrared photodetector based on the bound-to-continuum transition fabricated on the self-assembled i-InAs/n-GaAs quantum-dot (QD) heterostructure doped in GaAs barrier with no current blocking barrier. The photoresponse characteristics have been confirmed by distinct methods using a SiC globar source and a blackbody radiation source. From the blackbody system, the responsivity of 1750 mA/W at a peak wavelength of ${\sim}4.7$ μm (21 K) has been achieved, which is much higher than that reported on the n-InAs/i-GaAs QD-based infrared photodetectors doped in QDs with additional barrier.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Lee Sang
Quantum Dot Technology Laboratory Korea Research Institute Of Standards And Science
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LEE Jung
Nano-Device Research Center, Korea Institute of Science and Technology
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Noh Sam
Quantum Dot Technology Laboratory Korea Research Institute Of Standards And Science
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Choe Jung
Department Of Electrical Engineering And Computer Science Kyunghee University
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Hong Sung
Department Of Architectural Engineering Seoul National University
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Lee Uk
Department Of Chemistry National Fisheries University Of Pusan
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Lee Jung
Nano-Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
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Lee Uk
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Hong Sung
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Choe Jung
Department of Electrical Engineering and Computer Science, Kyunghee University, Suwon 449-701, Korea
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Lee Sang
Quantum Dot Technology Laboratory, Korea Research Institute of Standards and Science, Daedeok Science Town, Daejeon 305-600, Korea
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