Effects of Spectral Characteristics of Backlight Sources on Photo-Leakage Currents of Hydrogenated Amorphous Silicon Thin Film Transistor
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概要
- 論文の詳細を見る
For various light sources used as backlight systems such as a cold cathode fluorescent lamp (CCFL) or a white light-emitting diode (LED), the photo-leakage characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were analyzed and described in terms of the relationship between the spectral characteristics of light sources and the mechanism for the generation of electron–hole pairs. From the spectral analysis of the light sources, the leakage current is thought to be related to the wavelength of the peak intensity because the absorption coefficient of the a-Si:H layer is inversely proportional to the wavelength. In the case of a higher wavelength of peak intensity, the photo-leakage characteristics showed improvements in the leakage level and in the on/off current ratio despite similar luminance.
- 2008-08-25
著者
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Kwon Sang
Department Of Chemistry Yeungnam University
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Hong Sung
Department Of Architectural Engineering Seoul National University
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Cho Eou
Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam, Kyunggi 461-701, Korea
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Kwon Sang
Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam, Kyunggi 461-701, Korea
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Hong Sung
Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam, Kyunggi 461-701, Korea
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