Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers
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概要
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Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When \Delta V_{\text{FB}} is about 1 V after applying voltage at \pm 8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 μs, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 10^{4} cycles.
- 2011-06-25
著者
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Lee Dong
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Lee Hyo
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
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Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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You Hee-Wook
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
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Lee Dong
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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