Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers

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概要

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• Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When \Delta V_{\text{FB}} is about 1 V after applying voltage at \pm 8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 μs, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 10^{4} cycles.

• 2011-06-25

著者

• Lee Dong

  Quantum-function Spinics Lab. And Department Of Physics Hanyang University

• Cho Won-ju

  Department Of Electronic Material Engineering Kwangwoon University

• Lee Hyo

  Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea

• Cho Won-Ju

  Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

• Kim Eun

  Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea

• You Hee-Wook

  Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

• Lee Dong

  Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea

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