SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
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概要
- 論文の詳細を見る
Two kinds of novel device structures were suggested to achieve continued scaling of MOSFET gate lengths to the sub-100nm regime. Frist, an ultra-thin body SOI MOSFET with a recessed source-drain (S/D) structure is proposed to reduce the S/D extension (SDE) resistance. A recessed buried oxide under the SDE regions is completely filled with the heavily doped polysilicon, which can lead to a low SDE resistance. A recessed S/D SOI MOSFET with 30nm gate length and 5nm thick undoped channel, was successfully fabricated and showed the good SCE immunities. Second, we have also fabricated a ISG UTB MOSFET with a polysilicon raised S/D, HfO_2 gate dielectric, and Pt metal gate electrode, which is considered as the promising candidate for the sub-100nm devices. Even the short channel device with 40nm gate length, short channel effects were slightly observed after the high pressure anneal.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
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Lee Seong-jae
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Im K
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Baek In-bok
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University
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AHN Chang-Geun
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
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YANG Jong-Heon
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
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Ahn Chang-Geun
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Im Kiju
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Yang Jong-Heon
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Cho Won-ju
Electronics Materials Kwangwoon University
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Ahn C‐g
Electronics And Telecommunications Res. Inst. Daejon Kor
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Ahn Chang-geun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Cho W‐j
Lg Semicon Co. Ltd.
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Im Kiju
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Cho W‐j
Electronics Materials Kwangwoon University
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Ahn Chang-geun
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Yang Jong-heon
Nano-bio Electronic Devices Team Electronics And Telecommunications Research Institute
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