Yang Jong-Heon | Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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概要
関連著者
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Yang Jong-Heon
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Baek In-bok
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Ahn Chang-Geun
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Cho Won-ju
Electronics Materials Kwangwoon University
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Ahn C‐g
Electronics And Telecommunications Res. Inst. Daejon Kor
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Ahn Chang-geun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Cho W‐j
Lg Semicon Co. Ltd.
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Cho W‐j
Electronics Materials Kwangwoon University
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Ahn Chang-geun
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Lee Seong-jae
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Yang Jong-heon
Nano-bio Electronic Devices Team Electronics And Telecommunications Research Institute
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AHN Chang-Geun
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
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YANG Jong-Heon
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
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Im Kiju
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Im Kiju
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Lee Woo-hyun
Electronics Materials Kwangwoon University
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Lee Woo-Hyun
Department of Electronic Materials Engineering, Kwangwoon University
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Goo Hyun-Mo
Department of Electronic Materials Engineering, Kwangwoon University
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LEE Seongjae
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications
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Goo Hyun-mo
Department Of Electronic Materials Engineering Kwangwoon University
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Im K
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
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BAEK Sungkweon
Gwangju Institute of Science and Technology
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CHO Won-Ju
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division,
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OH Jihun
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division,
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
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Lee Seongjae
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Back In-Bok
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Baek In-Bok
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Yang Jong-Heon
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Yang Jong-Heon
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Im Kiju
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Im Kiju
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Ahn Chang-Geun
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Ahn Chang-Geun
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Cho Won-Ju
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Cho Won-ju
Department of Semiconductor and New Materials, College of Electronics & Information, Kwangwoon University, 447-1, Wolgye-Dong, Nowon-Gu 139-701, Republic of Korea
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Hwang Hyunsang
Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
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Hwang Hyunsang
Gwangju Institute of Science and Technology, 1, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
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Lee Seongjae
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Baek Sungkweon
Gwangju Institute of Science and Technology, 1, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
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Oh Jihun
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
著作論文
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices
- Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing