AHN Chang-Geun | Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
スポンサーリンク
概要
- Ahn Chang-Geunの詳細を見る
- 同名の論文著者
- Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Instituteの論文著者
関連著者
-
AHN Chang-Geun
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
-
YANG Jong-Heon
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
-
Cho Won-ju
Electronics Materials Kwangwoon University
-
Ahn C‐g
Electronics And Telecommunications Res. Inst. Daejon Kor
-
Ahn Chang-geun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
-
Cho W‐j
Lg Semicon Co. Ltd.
-
Cho W‐j
Electronics Materials Kwangwoon University
-
Ahn Chang-geun
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
-
Yang Jong-heon
Nano-bio Electronic Devices Team Electronics And Telecommunications Research Institute
-
Lee Seong-jae
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
-
Baek In-bok
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
-
Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University
-
Ahn Chang-Geun
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
-
Yang Jong-Heon
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
-
Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
-
Im K
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
-
Lee Woo-hyun
Electronics Materials Kwangwoon University
-
Lee Woo-Hyun
Department of Electronic Materials Engineering, Kwangwoon University
-
Im Kiju
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
-
Goo Hyun-Mo
Department of Electronic Materials Engineering, Kwangwoon University
-
Im Kiju
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
-
Goo Hyun-mo
Department Of Electronic Materials Engineering Kwangwoon University
-
OH Soon-Young
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
-
CHO Won-Ju
Electronics materials, Kwangwoon University
-
JANG Moon-Gyu
Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute
-
Back In-Bok
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
-
CHO Won-ju
Nanoelectronic Devices Team, Future Technology Research Division, ETRI
-
IM Kiju
Nanoelectronic Devices Team, Future Technology Research Division, ETRI
-
AHN Chang-Geun
Nanoelectronic Devices Team, Future Technology Research Division, ETRI
-
YANG Jong-Heon
Nanoelectronic Devices Team, Future Technology Research Division, ETRI
-
BAEK In-Bok
Nanoelectronic Devices Team, Future Technology Research Division, ETRI
-
LEE Seongjae
Nanoelectronic Devices Team, Future Technology Research Division, ETRI
-
Jang Moon-gyu
Nano-bio Electronic Devices Team Electronics And Telecommunications Research Institute
-
Oh Soon
Dept. Of Electronics Engineering Chungnam National University
-
Oh Soon-young
Nano-bio Electronic Devices Team Electronics And Telecommunications Research Institute
-
Ahn Chang-geun
Nano-bio Electronic Devices Team Electronics And Telecommunications Research Institute
著作論文
- Fabrication of Two-Layer stacked Poly-Si TFT CMOS Inverters Using Laser Crystallized channel with metal gate on Si Substrate
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
- Ultra-Shallow Junction Formation using Novel Plasma Doping Technology beyond 50nm MOS Devices