Cho W‐j | Lg Semicon Co. Ltd.

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著作論文

3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Fabrication of Two-Layer stacked Poly-Si TFT CMOS Inverters Using Laser Crystallized channel with metal gate on Si Substrate
SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
SOI-Based Nanoscale CMOS Device Technology
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
Ultra-Shallow Junction Formation using Novel Plasma Doping Technology beyond 50nm MOS Devices
Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length

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