Lee Seongjae | Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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概要
- Lee Seongjaeの詳細を見る
- 同名の論文著者
- Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Koreaの論文著者
関連著者
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Yang Jong-Heon
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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LEE Seongjae
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications
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Im Kiju
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Ahn Chang-geun
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
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Lee Seongjae
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Baek In-bok
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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BAEK Sungkweon
Gwangju Institute of Science and Technology
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CHO Won-Ju
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division,
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OH Jihun
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division,
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Baek In-Bok
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Yang Jong-Heon
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Yang Jong-Heon
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Im Kiju
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Im Kiju
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Ahn Chang-Geun
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Ahn Chang-Geun
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Cho Won-Ju
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Cho Won-ju
Department of Semiconductor and New Materials, College of Electronics & Information, Kwangwoon University, 447-1, Wolgye-Dong, Nowon-Gu 139-701, Republic of Korea
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Hwang Hyunsang
Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
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Hwang Hyunsang
Gwangju Institute of Science and Technology, 1, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
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Lee Seongjae
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Baek Sungkweon
Gwangju Institute of Science and Technology, 1, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
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Oh Jihun
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
著作論文
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices
- Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing