BAEK Sungkweon | Gwangju Institute of Science and Technology
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概要
関連著者
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BAEK Sungkweon
Gwangju Institute of Science and Technology
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Baek In-bok
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Yang Jong-Heon
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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LEE Seongjae
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
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Heo Sungho
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Dongkyu
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University
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Ahn Chang-Geun
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Im Kiju
Nano Bio-electric Devices Team, IT Convergence & Components Laboratory
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Cho Won-ju
Electronics Materials Kwangwoon University
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Ahn C‐g
Electronics And Telecommunications Res. Inst. Daejon Kor
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Ahn Chang-geun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Cho W‐j
Lg Semicon Co. Ltd.
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Im Kiju
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Cho W‐j
Electronics Materials Kwangwoon University
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Baek Sungkweon
Samsung Electronics Co. Ltd.
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LEE Dongkyu
Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.
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CHO Changhee
Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.
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HEO Sungho
Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.
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Cho Changhee
Gwangju Institute Of Science & Technology (gist) Dept. Of Materials Sci. & Eng.
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Ahn Chang-geun
Nano Bio-electric Devices Team It Convergence & Components Laboratory Etri
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Baek In-Bok
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Yang Jong-Heon
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Im Kiju
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Ahn Chang-Geun
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Cho Won-ju
Department of Semiconductor and New Materials, College of Electronics & Information, Kwangwoon University, 447-1, Wolgye-Dong, Nowon-Gu 139-701, Republic of Korea
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Hwang Hyunsang
Gwangju Institute of Science and Technology, 1, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
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Lee Seongjae
Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejon 305-360, Korea
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Lee Seongjae
Nano Electronic Device Team, Future Technology Research Division, Electronics and Telecommunications Research Institute, 161, Gajeong-dong, Yuseong-gu, Daejon 305-360, Republic of Korea
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Baek Sungkweon
Gwangju Institute of Science and Technology, 1, Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
著作論文
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices