A two-layer stacked polycrystalline silicon thin film transistor complementary metal oxide semiconductor inverters using laser crystallized channel with high-k and metal gate on Si (Special issue: Solid state devices and materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Ahn Chang-geun

  Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology

関連論文

• A two-layer stacked polycrystalline silicon thin film transistor complementary metal oxide semiconductor inverters using laser crystallized channel with high-k and metal gate on Si (Special issue: Solid state devices and materials)
• Fabrication of Two-Layer stacked Poly-Si TFT CMOS Inverters Using Laser Crystallized channel with metal gate on Si Substrate
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• Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
• SOI-Based Nanoscale CMOS Device Technology
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• Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
• Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
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• Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
• Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
• Effects of Segregated Ge on Electrical Properties of SiO_2/SiGe Interface
• Size and Interface State Dependence of the Luminescence Properties Si Nanocrystals

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