Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO2 Dielectrics
スポンサーリンク
概要
- 論文の詳細を見る
Nano-floating-gate memory (NFGM) devices containing SiO2 layers embedded with nanoparticles were fabricated, and their electrical characteristics were evaluated. The Au nanoparticles were successfully fabricated by the horizontal sputtering and served as a charge storage node of the NFGM devices. The size and density of the Au nanoparticles were easily controlled by setting the sputtering thickness of the Au thin film used. The memory window of the fabricated NFGM devices on a silicon-on-insulator substrate was about 3 V at a gate bias of $\pm 10$ V. The feasibility of using Au nanoparticles dispersed in SiO2 oxide layers for NFGM device application was also presented.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-30
著者
-
Kim Won
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kim Eun
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
-
Lee Dong
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
-
Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
-
KIM Jae-Hoon
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University
-
Kim Won
Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
-
Lee Min
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
-
Kim Jae-Hoon
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
-
Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
-
Lee Dong
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
関連論文
- Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 3-D stacked CMOS inverters using laser crystallized poly-Si film TFTs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications(Session 4 Silicon Devices II,AWAD2006)
- SOI-Based Nanoscale CMOS Device Technology
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
- Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications
- Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In_2O_3 Nano-Particles Embedded in Polyimide Insulator
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications (Special issue: Solid state devices and materials)
- Low temperature Poly-Si TFT nonvolatile memory devices with In_2O_3 nano-particles embedded in polyimide
- Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix
- Growth and Characterization of High Quality $a$-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique
- Carrier Dynamics of Deep-Level States in InGaN/GaN Multiquantum Wells
- Electrical Characterization of GaAs/AlGaAs Multi-Quantum Wells for Quantum Cascade Laser
- A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-$k$ and Metal Gate on Si
- Growth of ZnTe:O Thin Films by Oxygen-Plasma-Assisted Pulsed Laser Deposition (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Electrical and Optical Properties of p-Type InMnP:Zn for Nano-spintronics
- Study on Defect States in GaN Epilayer Induced by Irradiation of High-Energy Electrons
- Speed Enhancement of WSi2 Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer
- Fabrication of High Performance Ion-Sensitive Field-Effect Transistors Using an Engineered Sensing Membrane for Bio-Sensor Application
- Channel Recessed One Transistor Dynamic Random Access Memory with SiO2/Si3N4/SiO2 Gate Dielectric
- Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices
- Electrical Properties of InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetectors
- Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications
- Electrical Characterization of Nano-floating Gate Capacitor with Silicon Carbide Nano Particles
- Fabrication of Nonvolatile Nano Floating Gate Memory with Self-Assembled Metal-Oxide Nano Particles Embedded in Polyimide
- Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO2 Dielectrics
- Origin of Nonlinear Optical Characteristics of Crystalline Ge–Sb–Te Thin Films for Possible Superresolution Effects
- Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix
- Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
- Biomimetic Trehalose Biosensor Using Gustatory Receptor (Gr5a) Expressed in Drosophila Cells and Ion-Sensitive Field-Effect Transistor
- Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO2/HfO2 or Al2O3/HfO2 Stacks for Nonvolatile Memories
- Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al
- Comparative Study of Device Performance and Reliability in Amorphous InGaZnO Thin-Film Transistors with Various High-k Gate Dielectrics
- Biomimetic Trehalose Biosensor Using Gustatory Receptor (Gr5a) Expressed in Drosophila Cells and Ion-Sensitive Field-Effect Transistor (Special Issue : Solid State Devices and Materials)
- Enhanced Sensing Properties of Fully Depleted Silicon-on-Insulator-Based Extended-Gate Field-Effect Transistor with Dual-Gate Operation