Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
KIM Ki-Bum
School of Life Sciences and Biotechnology, Korea University
-
Kim Won
Materials Design Laboratory Koreainstitute Of Science And Technology
-
Cheong Byung-ki
Thin Film Materials Research Center, Korea Institute of Science and Technology
-
Kang D‐h
Korea Inst. Of Sci. And Technol. Seoul Kor
-
Lee Kyeong
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kim In
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kang Dae-hwan
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kim Ki-bum
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
Kim Ki-bum
School Of Life Sciences And Biotechnology Korea University
-
Kim Won
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
KIM Tae-Gyun
Thin Film Materials Research Center, Korea Institute of Science and Technology
-
JUNG Han-Ju
Thin Film Materials Research Center, Korea Institute of Science and Technology
-
LEE Taek
Thin Film Materials Research Center, Korea Institute of Science and Technology
-
AHN Dong-Ho
School of Materials Science and Engineering, Seoul National University
-
KWON Min-Ho
School of Materials Science and Engineering, Seoul National University
-
KWON Hyuk-Soon
School of Materials Science and Engineering, Seoul National University
-
Kim Tae-gyun
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Cheong Byung-ki
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Lee Taek
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Ahn Dong-ho
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
Jung Han-ju
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kwon Hyuk-soon
School Of Materials Science And Engineering Seoul National University
-
Kim Ki-bum
School Of Materials Science And Engineering Seoul National University
-
Kwon Min-ho
School Of Materials Science And Engineering Seoul National University
-
Ahn Dong-ho
School Of Materials Science And Engineering Seoul National University
関連論文
- A single element phase change memory (Silicon devices and materials)
- A single element phase change memory (Electron devices)
- Two-Dimensional Electrophoretic Analysis of Radio Frequency Radiation-Exposed MCF7 Breast Cancer Cells
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
- Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
- A Comparison of the Kinetics and the Evolution of Microstructure of the Solid Phase Crystallized a-(Si_Ge_/Si) and a-(Si/Si_Ge_) Bilayer Films; Interface versus Surface Nucleated Films
- Reducing the Thermal Budget of Solid Phase Crystallization of Amorphous Si Film Using Si_Ge_ Seed Layer
- Analysis of Read-out Signals in Land/Groove Recording of a Phase-Change Optical Disc
- Determination of Otical Constants of Thin Films from Measurements of Reflectance and Transmittance
- Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
- Millimeter Wave Compact Branch Line Coupler Using Metal-Air-Metal Capacitors
- Influence of Narrow Transverse Slit in Ferroelectric Based Voltage Tunable Phase Shifter
- Simulation of the Copper Diffusion Profile in SiO_2 during Bias Temperature Stress (BTS) Test
- Control of Microscratches in Chemical-Mechanical Polishing Process for Shallow Trench Isolation
- Sensitivity Characteristics of Positive and Negative Resists at 200kV Electron-Beam Lithography
- High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution
- A Single Element Phase Change Memory
- Erratum: ``Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory''
- Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory
- Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO2 Dielectrics
- Origin of Nonlinear Optical Characteristics of Crystalline Ge–Sb–Te Thin Films for Possible Superresolution Effects
- Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
- Sensitivity Characteristics of Positive and Negative Resists at 200 kV Electron-Beam Lithography