Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-08-15
著者
-
Cheong Byung-ki
Thin Film Materials Research Center, Korea Institute of Science and Technology
-
Lee Kyeong
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kang Dae-hwan
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kwon Hyuk-soon
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
Kim Ki-bum
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
AHN Dong-Ho
Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul Nationa
-
KWON Min-Ho
Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul Nationa
-
Cheong Byung-ki
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Ahn Dong-ho
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
関連論文
- A single element phase change memory (Silicon devices and materials)
- A single element phase change memory (Electron devices)
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
- Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
- A Comparison of the Kinetics and the Evolution of Microstructure of the Solid Phase Crystallized a-(Si_Ge_/Si) and a-(Si/Si_Ge_) Bilayer Films; Interface versus Surface Nucleated Films
- Reducing the Thermal Budget of Solid Phase Crystallization of Amorphous Si Film Using Si_Ge_ Seed Layer
- Analysis of Read-out Signals in Land/Groove Recording of a Phase-Change Optical Disc
- Determination of Otical Constants of Thin Films from Measurements of Reflectance and Transmittance