Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
スポンサーリンク
概要
- 論文の詳細を見る
The electrical switching behaviors of an offset-type phase change memory device with a highly resistive TiON layer were investigated, where the TiON layer (7 nm thick) was formed at a 70 nm wide contact between Ge1Sb2Te4 and TiN layers. Reversible transitions between crystalline (set) and amorphous (reset) phases were found to occur at relatively lower reset and set voltages, as compared with a device having no TiON layer. These results hold a high promise for a low-power operation of a phase change memory device.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-08-15
著者
-
Lee Kyeong
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kang Dae-hwan
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Kwon Hyuk-soon
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
Kim Ki-bum
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
Cheong Byung-ki
Thin Film Materials Research Center Korea Institute Of Science And Technology
-
Ahn Dong-ho
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
Kwon Min-ho
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
-
Kwon Min-Ho
Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
-
Kang Dae-Hwan
Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Korea
-
Kim Ki-Bum
Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
-
Kwon Hyuk-Soon
Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
-
Ahn Dong-Ho
Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
-
Lee Kyeong
Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Korea
関連論文
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
- Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
- A Comparison of the Kinetics and the Evolution of Microstructure of the Solid Phase Crystallized a-(Si_Ge_/Si) and a-(Si/Si_Ge_) Bilayer Films; Interface versus Surface Nucleated Films
- Reducing the Thermal Budget of Solid Phase Crystallization of Amorphous Si Film Using Si_Ge_ Seed Layer
- Analysis of Read-out Signals in Land/Groove Recording of a Phase-Change Optical Disc
- Determination of Otical Constants of Thin Films from Measurements of Reflectance and Transmittance
- Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
- Millimeter Wave Compact Branch Line Coupler Using Metal-Air-Metal Capacitors
- Influence of Narrow Transverse Slit in Ferroelectric Based Voltage Tunable Phase Shifter
- Control of Microscratches in Chemical-Mechanical Polishing Process for Shallow Trench Isolation
- High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution
- A Single Element Phase Change Memory
- Erratum: ``Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory''
- Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory
- Origin of Nonlinear Optical Characteristics of Crystalline Ge–Sb–Te Thin Films for Possible Superresolution Effects
- Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer