Cheong Byung-ki | Thin Film Materials Research Center Korea Institute Of Science And Technology

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A Single Element Phase Change Memory(Session 8A : Memory 2)
A Single Element Phase Change Memory(Session 8A : Memory 2)
Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
Analysis of Read-out Signals in Land/Groove Recording of a Phase-Change Optical Disc
Determination of Otical Constants of Thin Films from Measurements of Reflectance and Transmittance
High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution
A Single Element Phase Change Memory
Origin of Nonlinear Optical Characteristics of Crystalline Ge–Sb–Te Thin Films for Possible Superresolution Effects
Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer

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