A Single Element Phase Change Memory(Session 8A : Memory 2)

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概要

• 論文の詳細を見る

• We report a fast single element nonvolatile memory that employs amorphous to crystalline phase change. Temperature change is induced within a single electronic element in confined geometry transistors to cause the phase change. This novel phase change memory (PCM) operates without the need for charge transport through insulator films for charge storage in a floating gate. GeSbTe (GST) was employed to the phase change material undergoing transition below 200℃. The phase change, causing conductivity and permittivity change of the film, results in the threshold voltage shift observed in transistors and capacitors.

• 2010-06-23

著者

• Lee Sang-Hyeon

  School of Electrical and Computer Engineering, Cornell University

• Kim Moonkyung

  Thin Film Materials Research Center, Korea Institute of Science and Technology

• Cheong Byung-ki

  Thin Film Materials Research Center, Korea Institute of Science and Technology

• Kim Jooyeon

  School of Electrical Electronics Engineering, Ulsan College

• Lee Jo-Won

  National Program for Tera-level Nano Devices

• Tiwari Sandip

  School of Electrical and Computer Engineering, Cornel University

• Kim Jooyeon

  School Of Electrical Electronics Engineering Ulsan College

• Tiwari Sandip

  School Of Electrical And Computer Engineering Cornel University

• Kim Moonkyung

  Thin Film Materials Research Center Korea Institute Of Science And Technology

• Lee Sang-hyeon

  School Of Electrical And Computer Engineering Cornell University

• Cheong Byung-ki

  Thin Film Materials Research Center Korea Institute Of Science And Technology

• Lee Jo-won

  National Program For Tera-level Nanodevices

関連論文

• A single element phase change memory (Silicon devices and materials)
• A single element phase change memory (Electron devices)
• A Single Element Phase Change Memory(Session 8A : Memory 2)
• A Single Element Phase Change Memory(Session 8A : Memory 2)
• Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
• Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
• Analysis of Read-out Signals in Land/Groove Recording of a Phase-Change Optical Disc
• Determination of Otical Constants of Thin Films from Measurements of Reflectance and Transmittance
• High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution
• A Single Element Phase Change Memory
• Origin of Nonlinear Optical Characteristics of Crystalline Ge–Sb–Te Thin Films for Possible Superresolution Effects
• Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer

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