A single element phase change memory (Silicon devices and materials)
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概要
- 論文の詳細を見る
- 2010-06-30
著者
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Lee Sang-Hyeon
School of Electrical and Computer Engineering, Cornell University
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Kim Moonkyung
Thin Film Materials Research Center, Korea Institute of Science and Technology
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Cheong Byung-ki
Thin Film Materials Research Center, Korea Institute of Science and Technology
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Kim Jooyeon
School of Electrical Electronics Engineering, Ulsan College
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Lee Jo-Won
National Program for Tera-level Nano Devices
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Tiwari Sandip
School of Electrical and Computer Engineering, Cornel University
関連論文
- A single element phase change memory (Silicon devices and materials)
- A single element phase change memory (Electron devices)
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- A Single Element Phase Change Memory(Session 8A : Memory 2)
- Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge_1Sb_2Te_4 / TiN cell structure
- Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer
- A Single Element Phase Change Memory