High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution
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概要
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We investigated structures and phase transformation kinetics of (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 alloy mixture and its application for the phase change random access memory device. As-sputtered (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 thin film forms crystalline fcc phase. Meanwhile, we could obtain amorphous RESET state and crystalline SET state reproducibly by using appropriate voltage pulse conditions in device structure. We demonstrate that the minimum time for SET operation of phase change random access memory device with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 goes down to 20 ns, which is much smaller than 100 ns for device with Ge1Sb2Te4. The accelerated SET operation of the device with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 is interpreted to originate from reduced bond strength in comparison to pure Ge1Sb2Te4.
- 2007-09-15
著者
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Kang Dae-hwan
Thin Film Materials Research Center Korea Institute Of Science And Technology
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Cheong Byung-ki
Thin Film Materials Research Center Korea Institute Of Science And Technology
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Kang Dae-Hwan
Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-Dong, Seongbuk-Gu, Seoul 136-791, Korea
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Lee Min-Hyun
Department of Materials Science and Engineering, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Ahn Dong-Ho
Department of Materials Science and Engineering, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Kim Ki-Bum
Department of Materials Science and Engineering, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Kim Ki-Bum
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Jeong Han-ju
Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-Dong, Seongbuk-Gu, Seoul 136-791, Korea
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Lee Tae-Yon
Nano Systems Institute–National Core Research Center, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Lee Dong-Bok
Department of Materials Science and Engineering, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Yim Sung-Soo
Department of Materials Science and Engineering, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Wi Jung-Sub
Department of Materials Science and Engineering, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Jin Kyung-Bae
Department of Materials Science and Engineering, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Lee Tae-Yon
Nano Systems Institute–National Core Research Center, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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Cheong Byung-ki
Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-Dong, Seongbuk-Gu, Seoul 136-791, Korea
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