Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory
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概要
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Stoichiometric In2Se3 films were deposited at room temperature. X-ray diffractometry (XRD) and field-emission scanning electron microscopy (FE-SEM) showed that the as-deposited films were amorphous and had very smooth surface morphology while the films annealed at 250°C or higher temperatures were crystalline and had a rough surface. A cross-point-type phase change memory device with a Mo/In2Se3/Mo layered structure was fabricated. Static mode (or DC mode) and pulsed mode switching tests were successfully carried out on these cross-point-type devices. In the DC mode test, the as-grown amorphous In2Se3 resistor showed very high resistance in the low-voltage region. However, when it reached the threshold voltage, the electrical resistance of the device was markedly reduced due to the formation of an electrically conducting path (or a crystallized path). Pulsed mode switching performed on a phase change memory device with 0.7-μm-diameter contact hole showed that the resetting (amorphization) and setting (crystallization) of the device were achieved with a 70 ns pulse and a 1 μs pulse, respectively. After repeated switching, most of devices were stuck in the set state and could no longer be switched to the reset state. Cross-sectional SEM of these failed devices showed agglomerated voids near the interface between the In2Se3 resistor and Mo electrode, which may be responsible for the stuck-set failure of the devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Kang Dae-hwan
Thin Film Materials Research Center Korea Institute Of Science And Technology
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Kang Dae-Hwan
Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-701, Korea
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Lee Heon
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Lee Heon
Department of MSE, Korea University, 1 Anam-dong 5Ga, Sungbuk-Gu, Seoul 136-701, Korea
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