Low Temperature Fabrication of Residue-Free Polymer Patterns on Flexible Polymer Substrate
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概要
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Low temperature imprinting on various substrates is essential for applying nanoimprint lithography (NIL) to the patterning process of large-area substrates with low thermal resistance. In addition, the imprinting resist must be distributed uniformly over a large area with near-zero residue imprinting to reduce the level of pattern damage during the residue removal process. In this study, thermal imprinting with a poly(benzyl methacrylate) (PBMA) resist, which can be coated uniformly over a large-area substrate by spin-coating and imprinted at low temperatures, was used to form micro- to nano-sized patterns. The PBMA patterns with a near-zero residual layer could be formed on the substrate using the partial-filling method. Using this imprinting technique, nano-sized PBMA patterns with a minimized residual layer were transferred to a Si wafer and poly(ethylene terephthalate) (PET) film with dimensions $50 \times 50$ mm2. Metal patterns, as small as 70 nm, were fabricated on the substrate using this imprinting and lift-off process.
- 2009-09-25
著者
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LEE Jong-Hwa
Department of Biochemical Pharmacology, Korea Ginseng and Tobacco Research Institute
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Lee Heon
Department Of Mechanical Energy And Production Engineering Cheju National University
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Kim Jong-Woo
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Yang Ki-Yeon
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Yoon Kyung-Min
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Lee Heon
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Lee Jong-Hwa
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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