Fabrication and Evaluation of Nanopillar-Shaped Phase-Change Memory Devices
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概要
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In this study, nanopillar-shaped phase-change memory devices of various sizes were simply fabricated by nanosphere lithography, and their electrical characteristics were evaluated by conductive atomic force microscopy (AFM). As nanosphere materials, 180-nm diameter polystyrene balls were used for a size-controllable mask, silica balls with a diameter of 200 nm for a high etching-resistance mask, and sub-50 nm Ag nanoparticles were used for sub-50-nm-scale fabrication. Using the polystyrene balls, silica balls, and Ag nanoparticles, nanopillar-shaped phase-change memory devices with various diameters, heights as large as 1 μm, and sizes as small as less than 50 nm were successfully fabricated. The electrical properties of the nanopillar-shaped Ge2Sb2Te5 devices were evaluated by conductive AFM with an electrical measurement system.
- 2011-03-25
著者
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Hong Sung-hoon
Department Of Computer Engineering Chonnam National University
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Lee Heon
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Lee Heon
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Shin Ju-Hyeon
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Bae Byeong-Ju
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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Shin Ju-Hyeon
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Hong Sung-Hoon
Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
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SHIN Ju-Hyeon
Department of Materials Science and Engineering, Korea University
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