Fabrication of Multilevel Switching High Density Phase Change Data Recording Using Stacked GeTe/GeSbTe Structure

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概要

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• The multilevel switching characteristics of stacked phase change materials with the structures of Ge₂Sb₂Te₅, AgInSbTe/Ge₂Sb₂Te₅, and GeTe/Ge₂Sb₂Te₅ were investigated at the nano scale using nanoimprint lithography and conductive atomic force microscopy. Stacked phase change materials devices consisting of nano pillars 200 nm in diameter were fabricated using nanoimprint lithography, and their electrical characteristics were evaluated using conductive atomic force microscopy, with a pulse generator and a voltage source. The stacked GeTe/Ge₂Sb₂Te₅ phase change materials exhibited three levels of resistance with a difference of 2 orders in magnitude between them, while the single-layer and stacked phase change materials with similar electrical resistances, such as Ge₂Sb₂Te₅/AgInSbTe exhibited only bi level switching characteristics.

• 2011-08-25

著者

• Hong Sung-hoon

  Department Of Computer Engineering Chonnam National University

• Lee Young-kook

  Department Of Materials Science And Engineering Yonsei University

• Lee Heon

  Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea

• Lee Heon

  Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea

• Kim Kang-In

  Department of Bio-microsystem Technology, Korea University, Seoul 136-701, Korea

• Kim Kang-In

  Department of Biomicrosystem Technology, Korea University, Seoul 136-713, Korea

• Choi Yunjung

  Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

• Lee Young-Kook

  Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

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