Formation of TiO2 Nano Pattern on GaN-Based Light-Emitting Diodes for Light Extraction Efficiency
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概要
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A TiO2 nano-structure was formed on the indium-tin-oxide electrode of a GaN-based light-emitting diode (LED) in order to enhance the light extraction efficiency. The UV bi-layer imprinting and lift-off processes were used to form the TiO2 nano-structure without any plasma etching process, which can lead to degradation of the electrical properties of the device. As a result, the light output power of the LED on the patterned sapphire substrate (PSS) with the TiO2 nano-structure was enhanced up to 12% compared to identical LED formed on the PSS without TiO2 nano-structure. No electrical degradation was observed for the patterned LED device.
- 2010-10-25
著者
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Lee Heon
Department of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Lee Heon
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Cho Joong-Yeon
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Byeon Kyeong-Jae
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Park Hyoungwon
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Kim Hyeong-Seok
Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea
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CHO Joong-Yeon
Department of Materials Science and Engineering, Korea University
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