Device Characteristics of Polycrystalline Si_<0.84>Ge_<0.16> Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-06-15
著者
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Hwang Chang-won
Lcd 3 Samsung Electronics Co. Ltd.
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Kim K‐b
Seoul National Univ. Seoul Kor
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Kim Ki-bum
Division Of Materials Science And Engineering Seoul National University
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Kim J‐w
Hoseo Univ. Chungnam Kor
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Kim Ki-bum
Research Institute Of Advanced Materials School Of Materials Science And Engineering Seoul National
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Han Min-koo
Department Of Electrical Engineering Seoul National University
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RYU Myung-Kwan
Division of Materials Science and Engineering, Seoul National University
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RYU Myung-Kwan
Department of Metallurgical Engineering, Seoul National University
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KIM Jin-Won
Department of Metallurgical Engineering, Seoul National University
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KIM Ki-Bum
Department of Metallurgical Engineering, Seoul National University
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BAE Byung
LCD 3, Samsung Electronics Co., Ltd.
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KIM Sang-Joo
Department of Metallurgical Engineering, Seoul National University
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Kim Sang-joo
Department Of Mechanical And Information Engineering University Of Seoul
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Kim Sang-joo
Department Of Metallurgical Engineering Seoul National University
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Bae Byung
Lcd 3 Samsung Electronics Co. Ltd.
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Kim Jin-won
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Jin-won
Department Of Metallurgical Engineering Seoul National University
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Kim Jin-won
Department Of Environmental Horticulture University Of Seoul
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Ryu Myung-kwan
Division Of Materials Science And Engineering Seoul National University
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Kim Ki-Bum
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Han Min-Koo
Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea
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