Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• Han Min-koo

  Department Of Electrical Engineering Seoul National University

• Kim Sam-dong

  Millimeter-wave Innovation Technology Research Center (mint) Dongguk University

• Kim S‐d

  Seoul National Univ. Seoul Kor

• KIM Han-Soo

  Department of Materials Science & Engineering, Pohang University of Science & Technology (POSTECH)

• CHOI Yearn-Ik

  Department of Electrical Science, Korea Advanced Institute of Science and Technology

• Choi Yearn-ik

  Department Of Electrical Science Korea Advanced Institute Of Science And Technology

• Kim Han-soo

  Department Of Electrical Engineering Seoul National University

• Kim Han-soo

  Department Of Cardiology Ajou University School Of Medicine

• Kim Seong-dong

  Department Of Electrical Engineering University Of California

• Choi Young-hwan

  School Of Electrical Eng. Seoul Nat'l Univ.

• Han Min-Koo

  Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea

• Choi Yearn-Ik

  Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Korea

関連論文

• New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
• A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
• New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
• New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
• Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
• Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
• Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
• Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
• Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
• New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
• A Characteristics of Buried Channel Poly-Si TFTs
• In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
• A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
• Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
• Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
• Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
• A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
• Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
• Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
• SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
• New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
• A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
• A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
• SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
• A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
• A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
• Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
• New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
• A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
• Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
• Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
• A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
• AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
• A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
• Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
• A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
• Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
• Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
• Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio
• Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
• In-Situ Doped CMOS Polysilicon Thin Film Transistors
• Polysilicon Thin Film Transistors with PN Junction Gate
• Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
• Evolution of Size, Composition, and Morphology of Primary and Secondary Inclusions in Si/Mn and Si/Mn/Ti Deoxidized Steels
• Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
• A New Dual-Gate SOI LIGBT with the Shorted Anode
• A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
• Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
• A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
• Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
• A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
• Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
• A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
• A New Junction Termination in Power Semiconductor Devices employing Trench
• RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II,AWAD2006)
• RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II)
• Tapered Sidewall Schottky Diodes with Very Low Taper Angles : A-4: LSI-3 AND JUNCTION DEVICES
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
• Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
• A Hybrid Lateral SOI BMFET with High Current Gain
• Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
• Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
• IS078 Transcatheter Endovascular Radiation Treatment With Holmium-166 in Patients With In-stent Restenosis of Coronary Artery
• Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
• The effect of interface trap charges on poly-Si TFT
• The effect of interface trap charges on poly-Si TFT
• High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
• Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A New Junction Termination in Power Semiconductor Devices employing Trench
• Latch-up Suppressed Insulated Gate Bipolar Transistor by the Deep p^+ Ion Implantation under the n^+ Source
• Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
• A High-Gain AlGaAs/GaAs Heterojunction Bipolar Transistor Grown on Silicon Substrate
• A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
• Observation of Resonance by Individual Energy Lavels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes
• High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
• Behavioral improvement after transplantation of neural precursors derived from embryonic stem cells into the globally ischemic brain of adolescent rats
• Electrical Characteristics of the 0.1μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
• Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition
• Separated Drift Field Magmetotransistor with a p^+ Ring around an Emitter
• Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium--Indium--Zinc Oxide Thin Film Transistors
• Electrical Characteristics of the 0.1 μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
• Direct application of MR images to computer-assisted bone tumor surgery
• Radio Frequency Characteristics of Multifinger 0.1 μm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width
• Modeling of the Series Resistance for Below 100nm MOSFET Regime
• Effect of TiO2 Antireflection Layer with Various Conductivities and Refractive Indices on Performance of Amorphous Silicon/Amorphous Silicon Germanium Tandem Solar Cells
• Effect of Channel Length on the Reliability of Amorphous Indium--Gallium--Zinc Oxide Thin Film Transistors
• Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
• Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio

もっと見る 閉じる

スポンサーリンク