Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Choi Kwon-Young
School of Chemical and Biological Engineering, Institute of Molecular Biology and Genetics, Institut
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Han M‐k
The Author Is With The School Of Electrical Engineering Seoul National University
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Kim Chun-hong
School Of Electrical Engineering Seoul National University
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Choi K‐y
Seoul National Univ. Seoul Kor
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Han M‐k
Seoul Nat'l Univ. Seoul Kor
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Han Min-Koo
School of Electrical Engineering, Seoul National University
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PARK Kee-Chan
School of Electrical Engineering, Seoul National University
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KIM Cheon-Hong
School of Electrical Engineering, Seoul National University
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YOO Juhn-Suk
School of Electrical Engineering, Seoul National University
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Park K‐c
Lg Electronics Inc. Seoul Kor
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Yoo Juhn-suk
The Author Is With The School Of Electrical Engineering Seoul National University
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Kim Cheon-hong
School Of Electrical Engineering Seoul National University
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Han Min-koo
School Of Electrical Engineering And Computer Science #50 Seoul National University
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Choi Kwon-young
School Of Chemical And Biological Engineering Institute Of Molecular Biology And Genetics Institute
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Park Kee-chan
School Of E1ectrical Engineering Seoul National University
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Yoo Juhn-suk
Department Of Electrical Engineering Seoul National University
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Yoo Juhn
School Of Electrical Engineeririg Seoul National University
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Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
関連論文
- Regioselective hydroxylation of isoflavones by Streptomyces avermitilis MA-4680(MICROBIAL PHYSIOLOGY AND BIOTECHNOLOGY)
- New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain