A New Trenched Source Power MOSFET Improving Avalanche Energy
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概要
- 論文の詳細を見る
A new power metal oxide semiconductor field effect transistor (MOSFET) with a deep body contact, which improves the avalanche energy capability, is proposed and verified by the 2D numerical simulation. The deep body contact employing the trench process alters the direction of the current flow from the edge to the bottom of the p-body under the unclamped inductive switching (UIS) condition. The deep body contact also suppresses the activation of the parasitic bipolar transistor due to the reduction of the current density beneath the n+ source. The ruggedness of the proposed power MOSFET is improved without sacrificing any other electrical characteristics and increasing device area.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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KIM Soo-Seong
School of Electrical Eng. & Computer Science #50, Seoul National University
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Oh Jae-keun
School Of Electrical Eng. #50 Seoul National University
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Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Oh Jae-Keun
School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-Dong, Kwanak-Ku, Seoul 151-742, Korea
-
Kim Soo-Seong
School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-Dong, Kwanak-Ku, Seoul 151-742, Korea
-
Han Min-Koo
School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-Dong, Kwanak-Ku, Seoul 151-742, Korea
-
Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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