New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors
スポンサーリンク
概要
- 論文の詳細を見る
A new field plate structure for suppressing the leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. The proposed field plate structure consists of a gate field plate and an additional field plate. We fabricated AlGaN/GaN HEMTs employing the new field plate structure. The proposed field plate expands the depletion region and reduces the electric field concentration at the gate edge compared with the conventional single field plate. Experimental results show that the leakage current of the proposed device is 287.9 μA/mm, which is 42% less than that of a conventional one without field plate.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
LIM Jiyong
School of Electrical Eng. & Computer Science #50, Seoul National University
-
Choi Young-hwan
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
-
Lim Jiyong
School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
-
Han Min-Koo
School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
-
Choi Young-Hwan
School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
関連論文
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
- Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
- Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
- SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
- New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
- A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
- A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
- SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
- A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
- A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
- Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
- New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
- A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
- Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
- Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
- A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
- AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
- A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
- Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
- A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
- Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
- Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
- A New Dual-Gate SOI LIGBT with the Shorted Anode
- A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
- A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
- A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
- Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
- A Hybrid Lateral SOI BMFET with High Current Gain
- Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
- Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
- The effect of interface trap charges on poly-Si TFT
- The effect of interface trap charges on poly-Si TFT
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A New Gate-Overlapped LDD Poly-Si Thin Film Transistors
- High-voltage Schottky barrier diode on silicon substrate (Special issue: Microprocesses and nanotechnology)
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- Bias-Temperature- and Light-Induced Instability in Short-Channel ($L = 1.5$ μm) p-Type Polycrystalline Silicon Thin-Film Transistors on Glass Substrates
- Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
- New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors
- AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
- Nanocrystalline Silicon Thin-Film Transistor Fabricated without Substrate Heating for Flexible Display
- A New Poly-Si TFT Employing Air-Cavities at the Edge of Gate Oxide Reducing Gate Induced Drain Leakage Current
- A New 1200 V Punch Through-Insulated Gate Bipolar Transistor with Protection Circuit Employing Lateral Insulated Gate Bipolar Transistor and Floating p-Well Voltage Sensing Scheme
- A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
- Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors
- Effect of Ga Doping on Transparent and Conductive Al-Doped ZnO Films Prepared Using Magnetron Cosputtering
- Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors
- Hot-Carrier Effects in Short Channel (L = 1.5μm) p-Type Polycrystalline Silicon Thin-Film Transistors
- Novel F-Shaped Triple-Gate Structure for Suppression of Kink Effect and Improvement of Hot Carrier Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistor
- Novel L-Shaped Dual-Gate Structure of Polycrystalline Silicon Thin-Film Transistors for the Reduction of the Kink Current in Sequential Lateral Solidification or Continuous Wave Laser Method
- A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors
- New Current-Scaling Pixel Circuit Compensating Non uniform Electrical Characteristics for Active Matrix Organic Light Emitting Diode
- Hydrogenated Microcrystalline Silicon Film Growth by Inductively Coupled Plasma–Chemical Vapor Deposition on ZrO2 Gate Dielectric for Thin Film Transistors
- An Improved Junction Termination Design Employing Shallow Trenches and Field Limiting Rings for Power Devices
- Positive Shift of Threshold Voltage in Short-Channel ($L = 1.5$ μm) p-Type Polycrystalline Silicon Thin-Film Transistor under Off-State Bias Stress
- New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane
- Effect of Dynamic Bias Stress in Short-Channel (L=1.5 μm) p-Type Polycrystalline Silicon Thin-Film Transistors
- High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer
- Kink Suppression Improvement of Polycrystalline Silicon Thin-Film Transistors Employing Asymmetric Dual-Gate Design
- Time-Domain Quaternary-Weighted Pulse Width Modulation Driving Method for Active Matrix Organic Light-Emitting Diode Displays
- High-Aperture Pixel Design Employing $V_{\text{DD}}$ Line Elimination for Active Matrix Organic Light Emitting Diode Display
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
- A New Trenched Source Power MOSFET Improving Avalanche Energy
- Touch-Sensitive Active-Matrix Display with Liquid-Crystal Capacitance Detector Arrays
- A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit
- Lateral Diffusion of Phosphorous Induced by Excimer Laser Irradiation of Silicon Thin Film for Formation of Gradual Lightly Doped Region in Polycrystalline Silicon Thin Film Transistors
- The Space Charge Effect on the Discharge Current in Cross-Linked Polyethylene under High AC Voltages
- Second Breakdown of 18V Grounded Gate NMOS induced by the Kirk Effect under Electrostatic Discharge
- New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors
- A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor
- Low-Voltage Driven P-Type Polycrystalline Silicon Thin-Film Transistor Integrated Gate Driver Circuits for Low-Cost Chip-on-Glass Panel
- SiO2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate
- Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact
- Suppression of Leakage Current in Solid-Phase Crystallization Silicon Thin-Film Transistors Employing Off-State-Bias Annealing
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- A New Poly-Si Thin Film Transistors with Partial Amorphous Si Channel