Bias-Temperature- and Light-Induced Instability in Short-Channel ($L = 1.5$ μm) p-Type Polycrystalline Silicon Thin-Film Transistors on Glass Substrates
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概要
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We investigated the electrical al characteristics of laser-crystallized polycrystalline silicon thin-film transistors (poly-Si TFTs) under various stresses, such as bias, temperature, and light illumination. The threshold voltage of the short-channel TFTs ($L_{\text{CH}} = 1.5$ μm) was significantly shifted in the negative direction owing to bias temperature stress ($\Delta V_{\text{TH}} = -3.75$ V) compared with that found in long-channel TFTs ($\Delta V_{\text{TH}} = -0.32$ V) at 100 °C. We also investigated the effects of light illumination on laser-crystallized poly-Si TFTs. In order to improve the reliability of laser-crystallized poly-Si TFTs, we developed a multiple-channel structure fabricated without using any additional processes.
- 2011-07-25
著者
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Choi Sung-hwan
School Of Advanced Materials Engineering Andong National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Choi Sung-Hwan
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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