High-voltage Schottky barrier diode on silicon substrate (Special issue: Microprocesses and nanotechnology)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• LIM Jiyong

  School of Electrical Eng. & Computer Science #50, Seoul National University

• Park Jung

  School Of Electrical Engineering & Computer Science Seoul National University

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

• Ha Min-Woo

  Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Roh Cheong

  Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Hwang Dae

  Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Choi Hong

  Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Song Hong

  Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Lee Jun

  Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

• Seok Ogyun

  School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea

• Hahn Cheol-Koo

  Compound Semiconductor Devices Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea

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