Nanocrystalline Silicon Thin-Film Transistor Fabricated without Substrate Heating for Flexible Display
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概要
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We fabricated nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) without any substrate heating. High quality nc-Si and silicon dioxide films were deposited at room temperature employing an inductively coupled plasma chemical vapor deposition (ICP-CVD) system. For the nc-Si film, a crystalline phase was grown as a columnar structure and the crystalline volume fraction was 27%. On the silicon dioxide film, hydrogen plasma post-treatment was performed, and the electrical characteristics of silicon dioxide film improved owing to charge reduction and the annealing effect. The nc-Si and silicon dioxide films were used for the fabrication of nc-Si TFTs without substrate heating. Although there was no external heating, a mobility of 6.42 cm2$\cdot$V-1$\cdot$s-1 was achieved. This result indicates that nc-Si TFTs fabricated without substrate heating may be a suitable devices for a flexible display.
- 2009-08-25
著者
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Kim Sun-Jae
School of Electrical Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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Han Sang-Myeon
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Kim Sun-Jae
School of Electrical Engineering (#50), Seoul National University, San 56-1, Gwanak-gu, Seoul 151-742, Korea
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Han Min-Koo
School of Electrical Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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