A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor
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概要
- 論文の詳細を見る
A new circuit to protect lateral emitter switched thyristors (LESTs) for high voltage current saturation is proposed. We fabricated this circuit by employing a widely used process compatible with insulated gate bipolar transistors (IGBTs). When the floating n+ voltage is larger than the threshold voltage of protecting metal oxide semiconductor field effect transistor (MOSFET), the protective circuit alters the operation of the LEST from regenerative mode to non-regenerative mode. Experimental results showed that a high voltage current saturation exceeding 200 V was measured in the LEST with the proposed protective circuit, while the current saturation of the conventional LEST was limited to 17 V. This allowed the LEST to withstand the hard switching fault (HSF) condition over 10 μs during the hard switching fault (HSF) condition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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JEON Byung-Chul
School of Electrical Eng. & Computer Science #50, Seoul National University
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CHOI Yearn-Ik
College of Electronics Eng., Ajou University
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Ji In-hwan
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Choi Young-hwan
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Jeon Byung-Chul
School of Electrical Engineering. #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Han Min-Koo
School of Electrical Engineering. #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Choi Young-Hwan
School of Electrical Engineering. #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Choi Yearn-Ik
College of Electronics Engineering, Ajou University, Wonchun-Dong, Suwon, 442-749 Korea
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