A New 1200 V Punch Through-Insulated Gate Bipolar Transistor with Protection Circuit Employing Lateral Insulated Gate Bipolar Transistor and Floating p-Well Voltage Sensing Scheme

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概要

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• A new 1200 V punch through-insulated gate bipolar transistor (PT-IGBT) with a protection circuit employing a lateral IGBT (LIGBT) and a floating p-well voltage sensing scheme is proposed and implemented by fabricating the main IGBT and gate voltage pull-down circuit using the widely used planar IGBT process. The detection of the fault and gate voltage pull-down operations is achieved using the floating p-well sensing scheme. The LIGBT used as a pull-down transistor reduces the area of the protection circuit due to the enhanced current handling capability. The voltage saturation effect of a floating p-well voltage under the high voltage condition provides the 1200 V PT-IGBT with a reliable and rapid protection by preventing the gate oxide failure of the pull-down LIGBT and eliminating the blanking filter.

• 2007-04-30

著者

• Lee Seung-chul

  Fairchild Semiconductor Dodang-dong

• OH Kwang-Hoon

  Fairchild Semiconductor

• YUN Chong-Man

  Fairchild Semiconductor

• JEON Byung-Chul

  School of Electrical Eng. & Computer Science #50, Seoul National University

• Ji In-hwan

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Choi Young-hwan

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Yun Chong-Man

  Fairchild Semiconductor, Dodang-dong Wonmi-ku, Bucheon, Kyunggi-do 420-711, Korea

• Jeon Byung-Chul

  School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea

• Oh Kwang-Hoon

  Fairchild Semiconductor, Dodang-dong Wonmi-ku, Bucheon, Kyunggi-do 420-711, Korea

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

• Ji In-Hwan

  School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea

• Choi Young-Hwan

  School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea

• Han Young-Hwan

  Korea Atomic Energy Research Institute, Deokjin-dong, Yuseong-gu, Daejeon 350-353, Korea

• Lee Byung-Chul

  Korea Atomic Energy Research Institute, Deokjin-dong, Yuseong-gu, Daejeon 350-353, Korea

• Lee Seung-Chul

  Fairchild Semiconductor, Dodang-dong Wonmi-ku, Bucheon, Kyunggi-do 420-711, Korea

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