Positive Shift of Threshold Voltage in Short-Channel ($L = 1.5$ μm) p-Type Polycrystalline Silicon Thin-Film Transistor under Off-State Bias Stress

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概要

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• A high-performance p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistor (TFT) was fabricated on a glass substrate. We have investigated the electrical characteristics of short-channel p-type ELA poly-Si TFTs under off-state bias stress. We have found that the threshold voltage of the short-channel TFT ($L = 1.5$ μm) significantly shifted in the positive direction under off-state bias stress ($\Delta V_{\text{TH}} = 2.71$ V), whereas the threshold voltage of long-channel TFT ($L = 7$ μm) barely moved in the positive direction ($\Delta V_{\text{TH}} = 0.11$ V). This positive shift of threshold voltage in the short-channel TFT may be attributed to electron trapping at an interface between the poly-Si film and the gate oxide layer. In addition, we have extracted the length of the drain extension from an equation of the pseudo-lightly doped drain (LDD) model to verify the existence of free hole charges induced near the drain junction. The transfer characteristics of the forward and reverse modes after the off-state bias stress indicate that the electron trapping at the gate insulator/channel interface occurred near the drain junction region. The leakage current of the ELA poly-Si TFT was also suppressed without reducing the on-current level under the off-state bias stress due to the creation of a pseudo-LDD region.

• 2009-03-25

著者

• Choi Sung-hwan

  School Of Advanced Materials Engineering Andong National University

• Shin Hee-Sun

  School of Electrical Engineering #50, Seoul National University, 151-742 Seoul, Korea

• Mo Yeon-Gon

  Corporate R&D Center, Samsung SDI Co., Ltd., Yongin, Kyeonggi-do 446-577, Korea

• Mo Yeon-Gon

  Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Gyeonggi 446-711, Korea

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

• Kim Hye-Dong

  Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Gyeonggi 446-711, Korea

• Choi Sung-Hwan

  School of Electrical Engineering and Computer Science #50, Seoul National University, Gwanak_599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea

• Kim Hye-Dong

  Corporate R&D Center, Samsung SDI Co., Ltd., Yongin, Kyeonggi-do 446-577, Korea

• Kim Hye-Dong

  Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Gyeonggi 446-711, Korea

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