Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

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概要

• 論文の詳細を見る

• A new power metal oxide semiconductor field effect transistor (MOSFET) with deep body contact (DBC), which improves the avalanche energy capability, is proposed and verified by experimental results. For the experiment, a 60 V, 1 A power MOSFET employing DBC has been fabricated using a complementary metal oxide semiconductor (CMOS) compatible deep Si trench process. Previous simulations show that DBC alters the direction of the current flow from the edge to the bottom of the p-body under unclamped inductive switching (UIS) conditions. DBC also suppresses the activation of the parasitic bipolar transistor due to the reduction of the current density beneath the n+ source. Experimental results show that the ruggedness of the proposed power MOSFET is improved without sacrificing any other electrical characteristics and increasing device area.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• KIM Soo-Seong

  School of Electrical Eng. & Computer Science #50, Seoul National University

• CHOI Yearn-Ik

  School of Electrical Eng. & Computer Science #50, Seoul National University

• Ji In-hwan

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Choi Young-hwan

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Han Min-Koo

  School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-Dong, Kwanak-Ku, Seoul 151-742, Korea

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

• Choi Yearn-Ik

  School of Electrical Engineering and Computer Science #50, Seoul National University, Shinlim-Dong, Kwanak-Ku, Seoul 151-742, Korea

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