CHOI Yearn-Ik | School of Electrical Eng. & Computer Science #50, Seoul National University

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概要

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著作論文

Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
A New Dual-Gate SOI LIGBT with the Shorted Anode
A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
A New Lateral Dual-Gate Thyristor with Current Saturation
A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
A Hybrid Lateral SOI BMFET with High Current Gain
A New Lateral Dual-Gate Thyristor with Current Saturation
A New Voltage between Collector and Emitter ($V_{\text{CE}}$) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

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