JI In-Hwan | School of Electrical Eng., Seoul Nat'l Univ.

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著作論文

A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor

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