Ha Min-woo | School Of Electrical Eng. & Computer Science #50 Seoul National University

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概要

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著作論文

A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
A New Junction Termination in Power Semiconductor Devices employing Trench
Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
A New Junction Termination in Power Semiconductor Devices employing Trench
Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors
AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
An Improved Junction Termination Design Employing Shallow Trenches and Field Limiting Rings for Power Devices
A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit
New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors
SiO2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate

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