Seo Kwang-Seok | School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea

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著作論文

SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
A New Junction Termination in Power Semiconductor Devices employing Trench
Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate
A New Junction Termination in Power Semiconductor Devices employing Trench
A Compact Ultrawide Bandpass Filter on Thin-Film Substrate(Recent Technologies for Microwave and Millimeter-wave Passive Devices)
A Flip-Chip Assembled Millimeter-Wave Oscillator Stabilized with a Micromachined Cavity on a Thin-Film Substrate
Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors
AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization
System-on-Package Platform with Thick Benzocyclobutene Layer for Millimeter-Wave Antenna Application (Special Issue : Solid State Devices and Materials (1))
Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates

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