Choi Young-hwan | School Of Electrical Eng. Seoul Nat'l Univ.

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概要

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著作論文

A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
A New Dual-Gate SOI LIGBT with the Shorted Anode
A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
A New Junction Termination in Power Semiconductor Devices employing Trench
A New Lateral Dual-Gate Thyristor with Current Saturation
A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
A Hybrid Lateral SOI BMFET with High Current Gain
A New Lateral Dual-Gate Thyristor with Current Saturation
A New Junction Termination in Power Semiconductor Devices employing Trench
Latch-up Suppressed Insulated Gate Bipolar Transistor by the Deep p^+ Ion Implantation under the n^+ Source
Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well

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