A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well

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概要

• 論文の詳細を見る

• A trench-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with the p^+ cathode well is proposed to improve the latch-up characteristics, and the improved characteristics are verified numerically by MEDICI simulation. It is found that the trench-gate SOD LIGBT exhibits at least 6 times larger latch-up capability than the conventional devices. The enhanced latch-up capability of the trench-gate SOI LIGBT is obtained due to the fact that the hole current in the device bypasses the resistance of the p body region which is the source of the latch-up and reaches the cathode via the p^+ cathode well.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Lee B‐h

  Inha Univ. Inchon Kor

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• Han Min-koo

  Department Of Electrical Engineering Seoul National University

• CHOI Yearn-Ik

  Department of Electrical Science, Korea Advanced Institute of Science and Technology

• Choi Yearn-ik

  Department Of Electrical Science Korea Advanced Institute Of Science And Technology

• Yun Chong-man

  Department Of Electrical Engineering Seoul National University

• Byeon Dae-seok

  School Of Electrical Engineering Seoul National University

• LEE Byeong-Hoon

  Department of Electrical Engineering, Seoul Nat'l University

• Byeon Dae-Seok

  Department of Electrical Engineering, Seoul National University

• Choi Young-hwan

  School Of Electrical Eng. Seoul Nat'l Univ.

• Han Min-Koo

  Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea

• Choi Yearn-Ik

  Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Korea

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