A Characteristics of Buried Channel Poly-Si TFTs

スポンサーリンク

概要

• 論文の詳細を見る
• 1997-09-16

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Park C‐m

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Min B‐h

  School Of Electrical Engineeririg Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• JEON Jae-Hong

  The author is with the School of Electrical Engineering, Seoul National University

• JEON Jae-Hong

  Room 1102, School of Electrical Engineering, Seoul National University

• PARK Cheol-Min

  Room 1102, School of Electrical Engineering, Seoul National University

• YOO Juhn-Suk

  Room 1102, School of Electrical Engineering, Seoul National University

• HAN Min-Koo

  Room 1102, School of Electrical Engineering, Seoul National University

• MIN Byung-Hyuk

  Room 1102, School of Electrical Engineering, Seoul National University

• Jeon J‐h

  Seoul National Univ. Seoul Kor

• Yoo Juhn-suk

  The Author Is With The School Of Electrical Engineering Seoul National University

• Park Cheol-min

  School Of Electrical Engineering Seoul National University

• Park Cheol-min

  Room 1102 School Of Electrical Engineering Seoul National University

• Jun Jae-hong

  Department Of Electrical Engineering Seoul National University

• Jun Jae

  School Of Electrical Engineeririg Seoul National University

• Yoo Juhn-suk

  Department Of Electrical Engineering Seoul National University

• Yoo Juhn

  School Of Electrical Engineeririg Seoul National University

関連論文

• New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
• A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
• New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
• New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
• Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
• Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
• Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
• Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
• Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
• New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
• A Characteristics of Buried Channel Poly-Si TFTs
• In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
• A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
• Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
• Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
• Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
• Self-Induced Transparency in Samarium Atomic Vapor under Condition of High Temperature and High Density
• A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
• Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
• Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
• SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
• New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
• A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
• A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
• SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
• A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
• A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
• Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
• New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
• A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
• Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
• Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
• A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
• AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
• A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
• Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
• A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
• Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
• Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
• Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio
• Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
• In-Situ Doped CMOS Polysilicon Thin Film Transistors
• Polysilicon Thin Film Transistors with PN Junction Gate
• Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
• Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
• A New Dual-Gate SOI LIGBT with the Shorted Anode
• A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
• A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
• Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
• A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
• Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
• A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
• A New Junction Termination in Power Semiconductor Devices employing Trench
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
• Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
• A Hybrid Lateral SOI BMFET with High Current Gain
• Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
• Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
• Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
• Ring Dark Solitary Waves on a Gaussian Background Beam
• The effect of interface trap charges on poly-Si TFT
• The effect of interface trap charges on poly-Si TFT
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A New Junction Termination in Power Semiconductor Devices employing Trench
• Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
• A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well

もっと見る 閉じる

スポンサーリンク