In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Choi Hong-seok

  School Of Electrical Engineering Seoul National University

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Park C‐m

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Min B‐h

  School Of Electrical Engineeririg Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• PARK Cheol-Min

  Room 1102, School of Electrical Engineering, Seoul National University

• YOO Juhn-Suk

  Room 1102, School of Electrical Engineering, Seoul National University

• HAN Min-Koo

  Room 1102, School of Electrical Engineering, Seoul National University

• MIN Byung-Hyuk

  Room 1102, School of Electrical Engineering, Seoul National University

• CHOI Hong-Seok

  Room 1102, School of Electrical Engineering, Seoul National University

• Yoo Juhn-suk

  The Author Is With The School Of Electrical Engineering Seoul National University

• Park Cheol-min

  School Of Electrical Engineering Seoul National University

• Choi Hong-seok

  Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te

• Park Cheol-min

  Room 1102 School Of Electrical Engineering Seoul National University

• Yoo Juhn-suk

  Department Of Electrical Engineering Seoul National University

• Yoo Juhn

  School Of Electrical Engineeririg Seoul National University

関連論文

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• A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
• New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
• New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
• Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
• Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
• Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
• Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
• Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
• New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
• A Characteristics of Buried Channel Poly-Si TFTs
• In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
• A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
• Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
• Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
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• Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
• A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
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