A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Choi Y‐i
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Han M‐k
Seoul Nat'l Univ. Seoul Kor
関連論文
- New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
- A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
- Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
- Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
- SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
- New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
- A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
- A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
- SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
- A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
- A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
- Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
- New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
- A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
- Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
- Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
- A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
- AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
- A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
- Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
- A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
- Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
- In-Situ Doped CMOS Polysilicon Thin Film Transistors
- Polysilicon Thin Film Transistors with PN Junction Gate
- Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
- Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
- A New Dual-Gate SOI LIGBT with the Shorted Anode
- A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
- A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
- Post-annealing Effects on the Characteristics of Poly-Si TFT's
- Post-annealing Effects on the Characteristics of Poly-Si TFT's
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
- Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
- A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
- A new 1200V punch through-insulated gate bipolar transistor with protection circuit employing lateral insulated gate bipolar transistor and floating p-well voltage sensing scheme (Special issue: Solid state devices and materials)
- A New 600V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
- A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor (Special Issue: Solid State Devices & Materials)
- Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact (Special Issue: Solid State Devices & Materials)
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
- Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
- A Hybrid Lateral SOI BMFET with High Current Gain
- Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
- Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
- The effect of interface trap charges on poly-Si TFT
- The effect of interface trap charges on poly-Si TFT
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A New Junction Termination in Power Semiconductor Devices employing Trench
- Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
- A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
- New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors
- AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
- A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
- An Improved Junction Termination Design Employing Shallow Trenches and Field Limiting Rings for Power Devices
- A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit
- New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors
- SiO2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate