Min B‐h | School Of Electrical Engineeririg Seoul National University
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概要
関連著者
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Park C‐m
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Min B‐h
School Of Electrical Engineeririg Seoul National University
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Han M‐k
The Author Is With The School Of Electrical Engineering Seoul National University
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Han M‐k
Seoul Nat'l Univ. Seoul Kor
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Park Cheol-min
School Of Electrical Engineering Seoul National University
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Jeon J‐h
Seoul National Univ. Seoul Kor
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Jun Jae-hong
Department Of Electrical Engineering Seoul National University
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Jun Jae
School Of Electrical Engineeririg Seoul National University
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JEON Jae-Hong
The author is with the School of Electrical Engineering, Seoul National University
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Yoo Juhn-suk
The Author Is With The School Of Electrical Engineering Seoul National University
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Yoo Juhn-suk
Department Of Electrical Engineering Seoul National University
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Yoo Juhn
School Of Electrical Engineeririg Seoul National University
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Choi Hong-seok
School Of Electrical Engineering Seoul National University
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PARK Cheol-Min
Room 1102, School of Electrical Engineering, Seoul National University
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YOO Juhn-Suk
Room 1102, School of Electrical Engineering, Seoul National University
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HAN Min-Koo
Room 1102, School of Electrical Engineering, Seoul National University
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MIN Byung-Hyuk
Room 1102, School of Electrical Engineering, Seoul National University
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Min Byung-hyuk
Department Of Electrical Engineering Seoul National University
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Han Min-koo
Department Of Electrical Engineering Seoul National University
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Park Cheol-min
Department Of Electrical Engineering University Of California
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PARK Cheol-Min
Dept. of Electrical Engineering, Seoul National University
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MIN Byung-Hyuk
Dept. of Electrical Engineering, Seoul National University
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HAN Min-Koo
Dept. of Electrical Engineering, Seoul National University
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Choi Hong-seok
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Park Cheol-min
Room 1102 School Of Electrical Engineering Seoul National University
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PARK Cheol-Min
School of Electrical Engineering, Seoul National University
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MIN Byung-Hyuk
School of Electrical Engineering, Seoul National University
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JANG Keun-Ho
Department of Electrical Engineering, Seoul National University
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Jang Keun-ho
Department Of Electrical Engineering Seoul National University
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Han Min-Koo
Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea
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Han Min-Koo
School of Electrical Engineering, Seoul National University
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JEON Jae-Hong
Room 1102, School of Electrical Engineering, Seoul National University
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CHOI Hong-Seok
Room 1102, School of Electrical Engineering, Seoul National University
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JUN Jae-Hong
School of Electrical Engineering, Seoul National University
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Yoo Juhn
School of Electrical Engineeririg, Seoul National University
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Jun Jae
School of Electrical Engineeririg, Seoul National University
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Han Min
School of Electrical Engineeririg, Seoul National University
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MOON Dae-Kyu
LG R&D Center
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Han Min-koo
School Of Electrical Engineering And Computer Science #50 Seoul National University
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Han Min
School Of Electrical Engineering Seoul National University
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JUN Jae-Hong
Department of Electrical Engineering, Seoul National University
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JANG Keun-Ho
Dept. of Electrical Engineering, Seoul National University
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JUN Jae-Hong
Dept. of Electrical Engineering, Seoul National University
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BAE Byung-Seong
Special Marketing Team/Poly PJT, Samsung Electronics Co.
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Moon Dae-kyu
Lg R&d Center
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Bae Byung-seong
Special Marketing Team/poly Pjt Samsung Electronics Co.
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Jun Jae
School Of Biomedical Engineering College Of Biomedical And Health Science Research Institute Of Biom
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Jun Jae-hong
School Of Electrical Engineering Seoul National University
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Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
著作論文
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio
- Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
- In-Situ Doped CMOS Polysilicon Thin Film Transistors
- Polysilicon Thin Film Transistors with PN Junction Gate
- Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT