Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT

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概要

• 論文の詳細を見る

• We have investigated the hydrogenation effects on the poly-Si TFTs with various multi-channel structure poly-Si TFT. Especially, we have proposed a new multi-channel structure in order to verify the dominant hydrogenation pathway and this structure employs the gate electrode is surrounded with the poly-Si active layer in the source/drain region. We have characterized the fabricated new poly-Si TFT and compared with the conventional multi-channel TFT of the identical dimensions. Compared with the conventional device, the new device is more effective for increasing the carrier mobility. As a result, we have found that the dominant hydrogenation pathway may be a diffusion through active poly-Si layer into the channel region.

• 社団法人映像情報メディア学会の論文
• 1994-10-28

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Park C‐m

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Min B‐h

  School Of Electrical Engineeririg Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• Min Byung-hyuk

  Department Of Electrical Engineering Seoul National University

• Han Min-koo

  Department Of Electrical Engineering Seoul National University

• Park Cheol-min

  School Of Electrical Engineering Seoul National University

• Park Cheol-min

  Department Of Electrical Engineering University Of California

• Han Min-Koo

  Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea

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